Fabrication of freestanding GaN nanobelts with enhanced ultraviolet photoresponse performance

Shishi Liu,Qiao Wang,Yicheng Xie,Yuqing Yang,Hui Wang,Jianqi Dong,Chenguang He,Longfei He,Zhitao Chen,Shuti Li,Kang Zhang,Xingfu Wang

Applied Surface Science（2022）

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摘要

The fabricated single p-type N-polar GaN nanobelt ultraviolet photodetectors (UV PDs) exhibited high responsivity (7416.7 A/W) with a high photocurrent of 311 μA and the n-type PDs presented high detectivity (1.44 × 1014 Jones) with a low dark current of 0.351 nA.

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关键词

EC etching,N-polar GaN,UV PDs,Electrical properties,Photoresponse

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