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Features of Optical Transitions in GeSiSn/Si Multiple Quantum Wells

V. A. Timofeev,V. I. Mashanov,A. I. Nikiforov,I. V. Skvortsov,I. D. Loshkarev,D. V. Kolyada,D. D. Firsov,O. S. Komkov

Автометрия（2022）

Cited 0|Views16
Key words
molecular beam epitaxy,silicon,germanium,tin,solid solution,multiple quantum wells,band diagram,photoluminescence
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