Characterization of 1.2 kV 4H-SiC planar power MOSFETs

Ling Sang,Xiping Niu,Yunlai An,Tao Zhu,Wenting Zhang,Rui Liu,Zechen Du,Huan Ge,Jialin Li,Ling Li,Xiaoguang Wei,Fei Yang

Journal of Crystal Growth（2023）

引用 1|浏览9

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摘要

•Characterization of 1.2 kV SiC MOSFETs with two different cell topologies is studied.•Two cell designs both have high breakdown voltages and similar threshold voltages.•An 12% reduction in Ron is achieved for the interrupted linear cell design.•Crss for the interrupted linear cell is 24% larger than that of the linear cell.

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关键词

A1.Characterization,A2.Silicon carbide,A3.Cell topologies,B1.Semiconducting materials,B2. Semiconducting silicon compounds,B3.MOSFET

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