Design of 22 GHz Oscillator using Integrated Defected Ground Structure Over 0.13um SiGe BiCMOS Technology

This manuscript introduces a 22 GHz Voltage-Controlled Oscillator (VCO) that has a resonator consisting of an integrated Defected Ground Structure (DGS) to enhance the phase noise (PN) and reduction of size. The proposed VCO is designed in Ihp 0.13μm SiGe BiCMOS technology. The DGS is employed by differential cross-coupled VCO. This VCO has a center frequency of 22.2 GHz, and a 2 GHz tuning range. The use of DGS leads to a better-quality factor (Q)-factor than the conventional inductor, leading to better phase noise, hence better Figure of Mirit (FoM). Due to the small size of DGS, the VCO has a die area of 0.576 mm2 and consumes 6.7 mW of power. The VCO has FoM, and FoMA of 180.26db, and 182.4 dB, respectively. At the same time, the PN of the VCO is −101.6 dBc/Hz at 1 MHz regarding to the oscillation frequency of 22.2 GHz.