Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

The effects of geometry and cycling are evaluated for charge-trapping NAND memory devices with SiON tunneling layers. Processing splits include SiON tunneling layers with and without H-2/D-2 high-pressure annealing. Programed and erased devices were irradiated up to 500 krad(SiO2) with 10-keV X-rays. Excellent retention and endurance are demonstrated for these devices before and after irradiation. Scaling devices to smaller dimensions enhances program/erase efficiency and radiation tolerance.