A Method Monitoring Healthy State of Bond Wires in IGBT Based on dVCE/diC

As a core component of power electronic converters, condition monitoring of insulated gate bipolar transistors (IGBT) modules is of great significance for the safe and reliable operation of converters. Therefore, this paper proposes a method for monitoring the aging failure state of bond wires based on dV CE /di C , which can accurately identify the health status of the bond wires with high sensitivity. Firstly, the equivalent structure of the IGBT module is constructed, the linear relationship between voltage drop and current in the saturation area of the IGBT module is demonstrated mathematically in detail, and the qualitative relationship between dV CE /di C and the number of bond wires broken is analyzed. Secondly, the measurement circuit and experimental scheme for the saturation voltage drop of the IGBT are designed, and the quantitative relationship between dV CE /di C and junction temperature is determined by experimental measurements, and temperature normalization is carried out to exclude the effect of junction temperature. Finally, the theoretical analysis and experimental results show that the proposed IGBT bond wires condition monitoring method based dV CE /di C is sensitive to the bond wires broken process, can exclude the influence of junction temperature and injection current, and overcomes the disadvantages of conducting bond wires condition monitoring based on saturation voltage drop, which is of great engineering significance for the reliable operation of power converters.