Comparative Study on Degradation of the TFET and MOSFET

This paper compares the characteristics of MOSFET and TFET devices fabricated under the same process conditions. From the experimental results, it can be seen that after a period of degradation, the interface state density of the device increases, and the on-state current has a small increase, but the off state current of the TFET has the degradation obviously. The subthreshold swing also increases significantly with the device interface state degradation. The increase of off-state current and the degradation of subthreshold swing are extremely unfavorable for the application of TFET, and optimization is required to prevent the problems such as device failure.