A New Type of Homogenization Field Power Semiconductor Devices

This paper reviews the structure, mechanism and experiments of a new type of homogenization field (HOF) power semiconductor devices proposed by our group. The voltage sustaining layer (VSL) is the core of power semiconductor devices, which has been developed from the resistance-type to the junction-type. Recently, we reported the HOF structure with the MIS-type VSL, featuring a 2-dimensional periodicity along the voltage sustaining direction and its perpendicular direction. Therefore, a homogenization electric field is realized from the surface to the bulk under different doping doses and applied voltages. The HOF structure shows both higher breakdown voltage V B because of the enhanced average field and lower specific on-resistance R on,sp by the self-charge balance from the MIS arrays. Experiments of HOF devices demonstrated R on,sp reductions of over 40% when compared with the theoretical limit of triple RESURF devices.