Capacitive effects and memristive switching in three terminal multilayered MoS2 devices
2022 IEEE International Symposium on Circuits and Systems (ISCAS)(2022)
摘要
We report on the electrical properties of gated two-terminal multilayered molybdenum disulfide (MoS
2
) memristor devices having a planar architecture. The approach based on highly dispersed MoS
2
flakes drop cast onto a bottom gated Si/SiO
2
(100nm) wafer containing metal Pd contact electrodes yields devices that exhibit a number of complex properties including memristive and capacitive effects as well as multiple non-zero-crossing current-voltage hysteresis effects. The devices also show a reaction to a varying gate bias. An increasingly positive gate led to the devices displaying a linear ohmic I-V response while an increasingly negative gate bias drove the system to behave more memristive with a widening hysteresis loop.
更多查看译文
关键词
memristor,capacitance,memtransistor,three-terminal,transition metal dichalcogenides,MoS2
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要