Mechanism study of positive-bias stress stability for solution processed oxide semiconductor TFT

In this study, we investigated the positive bias stress (PBS) stability of solution-processed oxide semiconductor thin-film transistors (TFTs) under different stress gate voltages and temperatures. The ΔVon vs. stress time data were fitted very well by the stretched-exponential model. We also analyzed the data using a thermalization energy analysis method and found estimated barrier heights that agree with the stretched-exponential model fitting. We attributed the PBS instability to the deep interface traps at the interface between channel and gate insulator.