High-Performance GaN Vertical Trench MOSFETs Grown on Si Substrate
2022 Compound Semiconductor Week (CSW)(2022)
摘要
In this work, we report high-performance GaN quasi-vertical trench MOSFETs grown on cost-effective 6-inch Si substrates. The fabricated GaN trench MOSFETs on Si, with a 2-μm drift layer, show a low specific ON-resistance (R
ON,sp
) of 0.89 mΩ·cm
2
, a high maximum drain current (I
D,max
) of 4.1 kA/cm
2
, a large V
th
of 5.1 V and a breakdown voltage (V
BR
) of 320 V, resulting from the combination of epilayer growth condition tuning and proper electric field management in the device.
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关键词
GaN vertical trench MOSFETs,GaN-on-Si
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