Resolving the Reliability Issues of Open Blocks for 3-D NAND Flash: Observations and Strategies.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems（2022）
关键词
Flash memories,Three-dimensional displays,Reliability,Programming,Threshold voltage,Systematics,Degradation,3-D NAND flash memory,open block,raw bit-error rates (RBER)
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