Simplified Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors

Harold. P. Hjalmarson, Steven C. Witczak,Samuel Z. Roark,Renee Van Ginhoven,Thomas Buchheit,Hugh Barnaby,Philippe Adell

2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS)（2021）

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摘要

A simplified approach to estimating radiationinduced Si-SiO2 interface trap densities, based on steady-state populations of relevant mobile species, is presented. The doserate sensitivity arises from bimolecular reaction terms. Molecular hydrogen increases the effects of ionizing radiation. Exciton contributions explain effects at high dose-rates. Calculations are consistent with known trends in dose, dose rate, hydrogen content and temperature.

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关键词

ELDRS,ionizing radiation,device model,dose rate,total dose,interface trap,hydrogen,exciton

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