Impact of the Data Retention Threshold Voltage on the Cell-to-Cell SEU Sensitivity of COTS SRAMs

Mohammadreza Rezaei, Arturo Arinero Panduro,Francisco J. Franco,Juan Carlos Fabero,Hortensia Mecha,Manon Letiche,Helmut Puchner,Juan Antonio Clemente

2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS)（2021）

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摘要

An experimental study on the cell-to-cell sensitivity of 65-nm, 90-nm and 130-nm volatile bulk COTS SRAMs to thermal neutron irradiation is presented. Results show a dependency between V DR and the number of bitflips after irradiation.

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关键词

COTS,SRAM,Thermal neutron tests,radiation hardness,reliability,soft error

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