Epitaxially Regrown Quantum Dot Photonic Crystal Surface Emitting Laser

Aye S. M. Kyaw,Ben C. King,Adam F. McKenzie,Neil D. Gerrard,Zijun Bian,Daehyun Kim,Jingzhao Liu,Xingyu Zhao,Kenichi Nishi,Keizo Takemasa,Mitsuru Sugawara,David T. D. Childs, Calum H. Hill,Richard J. E. Taylor,Richard A. Hogg

2022 28th International Semiconductor Laser Conference (ISLC)（2022）

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摘要

Quantum dot based epitaxially regrown photonic crystal surface-emitting lasers (PCSELs) are demonstrated at room temperature. The GaAs based devices exhibit ground-state lasing at~ 1230 nm and excited-state lasing at~ 1140 nm with threshold current densities of 0.69 $\text{kA}/\text{cm}^{2}$ and 1.05 $\text{kA}/\text{cm}^{2}$ , respectively.

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