Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications

2022 28th International Semiconductor Laser Conference (ISLC)(2022)

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摘要
We describe the use of a modified QW structure to achieve temperature stability in O-band lasers. We show the potential for temperature insensitivity of threshold from -40 to $+80{\ }^{\circ}\mathrm{C}$ in an InGaAsP/InP structure. Such devices are of interest for lower energy consuming datacomms systems.
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关键词
quantum well lasers,temperature-insensitive,inp-based,o-band
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