InP DHBT test structure optimization towards 110 GHz characterization
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)(2022)
摘要
In this paper, three different designs of test structures are explored in order to accurately characterize InP DHBTs up to 110 GHz. In particular, a new design, optimized for high frequency measurements while keeping high device density, has been proposed. De-embedding test structures are analyzed and InP DHBT RF figures of merit are extracted for the three designs. Extraction of the maximum oscillation frequency,
$f_{\text{MAX}}$
, confirms the relevance of optimized test structures as well as good performances of the new design.
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关键词
Characterization,Millimeter-wave,Double heterojunction bipolar transistor (DHBT),InP/InGaAs,Indium Phosphide (InP)
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