3659-V NO₂ p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates
IEEE Electron Device Letters(2023)
摘要
In this letter, we report an NO2 p-type doped and Al2O3 bilayer passivated diamond metal–oxide–semiconductor field-effect transistor (MOSFET) fabricated on a misoriented heteroepitaxial diamond substrate. The MOSFET demonstrated a high breakdown voltage of 3659 V, the highest reported among diamond MOSFETs. MOSFETs with a gate length of
$2.5~\mu \text{m}$
exhibited a maximum drain current density of 372 mA/mm and maximum available power density (Baliga’s figure-of-merit) of 173 MW/cm2. In addition, the maximum mobility was estimated to be
${187}\,\text {cm}^{{2}}/\text {V}\cdot \text{s}$
, and the subthreshold swing was 189 mV/dec. This study explores the prospects of misoriented heteroepitaxial diamonds in power electronic device applications.
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关键词
Diamond MOSFET,heteroepitaxial diamond,high voltage,misoriented diamond,NO₂ p-type doping
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