Effect of overlap region for schottky metal and field oxide on the electrical characteristics of 6500 V/50A 4H-SiC JBS diodes

Xiping Niu,Ling Sang,Yunlai An,Peifei Wu,Wenting Zhang,Rui Liu,Zechen Du,Chenmeng Li,Xiaoguang Wei,Fei Yang

Journal of Crystal Growth（2023）

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摘要

•The reverse breakdown voltage of 6500 V/50A 4H-SiC JBS diodes was studied.•The reverse voltage is up to 7000 V at the reverse leakage current of 10 μA.•The electric field of the simulative diodes reduced by about 30%-50%.•The experimental results are in good consistent with the simulation results.

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关键词

A1. 4H-SiC,A2. JBS,A3. Diodes,B1. Overlap region,B2. Field oxide,B3. Reverse breakdown voltage

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