Bias effects on the electro-optic response of Ge-on-Si waveguide photodetectors
user-5ed732bc4c775e09d87b4c18(2021)
摘要
We compare measurements and three-dimensional multiphysics simulations of the electro-optic frequency response of two vertical-pin-junction Ge-on-Si waveguide photodetectors at different bias voltages. The very good agreement observed even with no applied bias is promising towards the optimization of WDPs for operation in near-zero-bias conditions.
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关键词
Silicon photonics, Ge-on-Si pin waveguide photodetectors, electro-optic frequency response, multiphysics modeling
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