High-Performance UV-Vis Broad-Spectra Photodetector Based on a beta-Ga2O3/Au/MAPbBr3 Sandwich Structure

The UV-vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV-vis PDs. This severely affects the practical application of UV-vis broad-spectra PDs. Here, a simple sandwich structure PD (SSPD) composed of beta-Ga2O3, Au electrodes, and the MAPbBr3 perovskite is designed and fabricated to simultaneous enhance the detection performance in the UV and visible light regions. The beta-Ga2O3/Au/MAPbBr3 SSPD exhibits enhanced optoelectronic performance with high responsivities of 0.47 and 1.43 A W-1 at 240 and 520 nm under a bias of 6 voltage (V), respectively, which are 8.5 and 23 times than that of the metal-semiconductor- metal (MSM) structure MAPbBr3 PD at 6 V, respectively. The enhanced performance was attributed to the effective suppression of carrier recombination due to the efficient interface charge separation in the device structure. In addition, the self-powered response characteristic is also realized by forming a type-II heterojunction between beta-Ga2O3 and MAPbBr3, which gives the beta-Ga2O3/Au/MAPbBr3 SSPD superior single-pixel photo-imaging ability without an external power supply. This work provides a simple and effective method for the preparation of high-performance self-powered imaging PDs in the UV-visible region.