Significant Lifetime Enhancement in QLEDs by Reducing Interfacial Charge Accumulation via Fluorine Incorporation in the ZnO Electron Transport Layer

Highlights Quantum dots light emitting devices (QLEDs) with extremely long half-lifetimes at 100 cd m −2 , 2,370,000 h were successfully fabricated using CF 4 plasma-treated ZnO nanoparticle electron transport layers. A new experimental approach that probes changes in exciton lifetime under current flow was used to investigate the changes in carrier concentration in QLEDs. Evidence of the dependence of QLED stability on electron and hole concentrations at the QD/HTL interface was revealed.