Resistive switching of two-dimensional NiAl-layered double hydroxides and memory logical functions

Two-dimensional NiAl layered double hydroxides (LDHs) were synthesized by urea hydrolysis method. Considering its unique layered structure and high-speed carrier transfer channel, NiAl-LDHs were applied to the active layer of memristor through spin coating process. It is found that the Al/NiAl-LDHs/Al memristor exhibits unipolar resistance switching characteristics, which resistive switching mechanism is attributed to formation and fusing of conductive filaments controlled by oxygen vacancies. Based on this Al/NiAl-LDHs/Al memristor, a D-type latch was constructed. A memtransistor with Si/SiO2/graphene oxide (GO)/Al/NiAl-LDHs/Al structure was built by connecting Al/NiAl-LDHs/Al memristor in series on the drain electrode of GO transistor. The memtransistor exhibits excellent gate controllability and resistive switching characteristics. Combined with its characteristics, we used the memtransistor to build a D-trigger and verify its memory logical function. The result shows the great potential of layered bimetallic hydroxide materials in the field of resistance switching memory and memory computing.(c) 2022 Elsevier B.V. All rights reserved.