Current Status of Ga2O3 Power Devices in ETRI

These days, Ga 2 O 3 semiconductors are being actively studied for power device applications due to their excellent properties such as bandgap, expected breakdown field, Beliga’s figure of merit. This paper reports the status of Ga 2 O 3 power devices developed in ETRI last few years including multi-kV class lateral MOSFETs/SBDs and near 1kV class vertical SBDs fabricated on a piece and 2-inch β-Ga 2 O 3 wafers, respectively. These results show that β-Ga 2 O 3 based power devices are very promising candidates for the next generation high-voltage and high-power switching devices applications.