STT-MRAM Product Reliability and Cross-Talk

V. B. Naik,K. Yamane,J. Kwon,J. H. Lim, N. Balasankaran, N. L. Chung, L. Y. Hau,R. Chao,C. Chiang,Y. Huang,L. Pu, L. Ma, C. Meng,Y. Otani,L. Zhang, S. H. Jang,T. Ling, J. W. Ting,H. Yoon,J. Mueller, B. Pfefferling, O. Kallensee, T. Merbeth,C. S. Seet,J. Wong, Y. S. You, S. Soss,T. H. Chan, S. Y. Siah

6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022)（2022）

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摘要

STT-MRAM has been showcased to be a viable solution to replace eFlash and SRAM technologies. With the increasing demand for connected edge computing and internet of things, the usage of STT-MRAM in MCU and MPU products has become the reality. The product reliability of industrial-grade (-40 similar to 125 degrees C) 40Mb 22FDX (R) embedded-MRAM technology having 5x-solder reflows compatibility stack is presented. The stand-by magnetic immunity and cross-talk between MRAM and RF are also discussed.

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关键词

STT-MRAM, Reliability, Immunity

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