Metal-Semiconductor-Metal (MSM) Varactor Based on AlGaN/GaN Heterostructure with Cutoff Frequency of 914.5GHz for Terahertz Frequency Multiplication
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)(2018)
摘要
The design, fabrication and characteristics of planar metal-semiconductor-metal (MSM) two-dimensional electron gas (2DEG) varactors based on AlGaN/GaN high electron mobility transistor (HEMT) for terahertz multiplication are presented. The gate length of ~450nm and the gate distance of 1μm are processed by using electron beam lithography (EBL). The DC characteristic shows a very low current leakage of ~7.3 ×10
-11
A/mm, which is advantageous to the power consumption of terahertz multiplier. S-parameters are measured to obtain the high-frequency performance. The series resistance (R
0
)of ~ 41.26 Ω, and the capacitance (C
0
) of ~4.22 fF are abstracted respectively by matching the equivalent circuit at zero bias voltage. The cutoff frequency is of ~ 914.5 GHz. The capacitance switching ration (C
max
/C
min
) is ≥ 2.4, and the figure of merit (FOM) is above 2.2 THz.
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关键词
Terahertz,metal-semiconductor-metal (MSM) two-dimensional electron gas (2DEG),AlGaN/GaN,high electron mobility transistor (HEMT)
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