EUV Minimum Pitch Single Patterning for 5nm Node Manufacturing

This paper presents a minimum pitch single patterning process for 5nm node back-end-of-line (BEOL) integration based on extreme ultraviolet (EUV) lithography with quasar illumination and optical proximity correction (OPC). OPC was applied for improving stochastic printing failures such as single-line-open (SLO) and micro-bridges. The optimized OPC effectively improved 94% of SLO and 96% of micro-bridges. The reliability requirement of the time-dependent dielectric breakdown (TDDB) was also satisfied for 5nm node BEOL integration, and this new process would be implemented for sub-5nm node device manufacturing.