37.1: Invited Paper: Nanosheet High Mobility SnO ₂ ‐SnO Complementary TFTs for System‐on‐Display and Monolithic Three‐Dimensional Integrated Circuit

The top‐gate 4.5‐nm‐thick SnO2 nanosheet nTFT has the high 136 cm 2 /Vs field‐effect mobility (μ FE ), sharp 1.5×10 8 on‐current/off‐current (I ON /I OFF ), and fast turn‐on subthreshold slope (SS) of 108 mV/decade. The top‐gate 7‐nm‐thick nanosheet SnO pTFT has a high μ FE of 4.4 cm 2 /Vs, large I ON /I OFF of 1.2×10 5 , and SS of 526 mV/decade. These CTFTs will enable the system‐on‐panel (SoP) and Monolithic Three‐Dimensional (3D) Integrated Circuit (IC).