Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput

S. M. Alam, D. Houssameddine, F. Neumeyer, I. Rahman, M. DeHerrera,S. Ikegawa, P. Sanchez, X. Zhang, Y. Wang,J. Williams, D. Gogl, H. Xu, M. Farook, D. Aceves,H. K. Lee, F. B. Mancoff, M. Chou, CH. Tan, B. Huang, S. Mukherjee, M. Lu,A. Shah,K. Nagel, Y. Kim,S. Aggarwal

2022 IEEE International Memory Workshop (IMW)(2022)

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摘要
We present the new generation of Everspin's STT-MRAM device with extended Serial Peripheral Interface (xSPI). The device is capable of persistent memory operation with random reads and writes while supporting page-buffered program and optional erase for compatibility with Serial NOR Flash protocol. MRAM technology has been optimized for the needed improvements to enable low-latency industrial applications. Two bank architecture with a new write scheme is employed for fast write providing up to 4 orders of magnitude write energy improvement over traditional NOR. We demonstrate full 64Mb die high-speed functionality with symmetric read and write throughput of up to 400MB/s.
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关键词
STT-MRAM,xSPI,persistent memory
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