Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput
2022 IEEE International Memory Workshop (IMW)(2022)
摘要
We present the new generation of Everspin's STT-MRAM device with extended Serial Peripheral Interface (xSPI). The device is capable of persistent memory operation with random reads and writes while supporting page-buffered program and optional erase for compatibility with Serial NOR Flash protocol. MRAM technology has been optimized for the needed improvements to enable low-latency industrial applications. Two bank architecture with a new write scheme is employed for fast write providing up to 4 orders of magnitude write energy improvement over traditional NOR. We demonstrate full 64Mb die high-speed functionality with symmetric read and write throughput of up to 400MB/s.
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关键词
STT-MRAM,xSPI,persistent memory
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