A 45-nm RFSOI CMOS Based Compact Doherty Power Amplifier For mm-wave 5G Applications

A compact Doherty power amplifier (PA) with a single transformer is demonstrated in a 45-nm RFSOI CMOS device technology. The newly designed 45-nm RFSOI based two-stage differential Doherty PA shows a saturated output power (P SAT ) of >21.2dBm, power gain of >18.8dB, and a peak power-added efficiency (PAE) of >34.3%at the 27 GHz CW signal. These results show much improved performances compared to our previous PA (P SAT : 18.8 dBm, peak PAE 30 %), which is fabricated in a 2S-nm bulk CMOS. Under the 5G NR 64 AM OF DM (PAPR >10dB), the PA IC exhibits superior linear output power (P LIN ) of 14.8 dBm and average PAE of 19.8 %. (a) The PA IC occupies as compact core area as 680 μm×280μm.