650V, 7mOhm SiC MOSFET Development for Dual-Side Sintered Power Modules in Electric Drive Vehicles

For the first time, a new 650V SiC MOSFET chip is designed, fabricated, and tested for use in dual-side soldering and sintering processes. The RDSON was measured to be ~7mOmega up to 150A at 25deg C in package form. The corresponding specific RDSON was 1.8mOmega cm2. The SiC MOSFET chip had a mean measured breakdown of 964V, with 31V standard deviation, across a population of 500 die. Only a 35-40% increase in RDSON was measured from 25deg C to 150deg C. With no knee voltage, conduction losses relative to comparably rated Si IGBT power modules can be reduced up to 80%.