Physical Mechanism of Device Degradation & Its Recovery Dynamics of P-Gan Gate HEMTs under Repetitive Short Circuit Stress
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)（2022）
关键词
p-GaN gate HEMTs,repetitive short circuit,electrical characteristics degradation,recovery dynamics,electron trapping,hot electron
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