4.5 kV Double-gate RC-IEGT with Hole Control Gate

We propose a 4.5-kV double-gate reverse-conducting injection-enhanced gate transistor (RC-IEGT) with a hole control gate (H-CG). The H-CG is fabricated in the surface of the device separate from the main gate. The H-CG structure increases the reduction rate of turn-off loss compared with the conventional single gate by promoting hole extraction before turn-off. This structure is advantageous in terms of short-circuit capacity because the saturation current does not increase due to the absence of an N-emitter along the H-CG. The H-CG is also effective for reducing the reverse recovery loss because hole injection is suppressed by the positive voltage before reverse recovery. We succeeded in reducing the total switching loss by 24% compared with the conventional single-gate structure.