A Total Ionizing Dose Radiation Hardened Trench VDMOS Device

A total dose radiation hardened trench VDMOS device is fabricated. This paper briefly introduces the designing methods of the epitaxial wafer, n-type body region doping concentration and drive-in condition, source region doping concentration, trench width and depth, and cell size. In this paper, n-type body region is doped and driven-in before the growth of the gate oxide. Simulation data, experimenting results before and after the total dose radiation are given, and comparisons are analyzed. For the specified trench VDMOS device introduced in this paper, the threshold voltage shift is -0.8V at a total dose of 100krad (Si). This result indicates that the designed trench VDMOS device shows the ability of total dose radiation tolerance.