Theoretical Study on the Optoelectronic Properties of Al1-xGaxN-Based Deep UV LEDs with Single and Multiple Quantum Well Heterostructures

Characteristics of Al 1– x Ga x N-based deep UV LEDs with varied number of Al 0.5 Ga 0.5 N/Al 0.4 Ga 0.6 N quantum well(s) are theoretically investigated. The effects of quantum design on the internal quantum efficiency, radiative transport, and output power are discussed.