Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）
摘要
To improve the reliability of a nanoscale (d=30 nm) ovonic threshold switching (OTS) selector, we report for the first time the effect of microwave annealing (MWA) on the electrical characteristics of an OTS device. The MWA-treated OTS device shows low initial forming voltage, excellent endurance (> 10
11
), and reduced threshold voltage (V
th
) drift (~ 67 %), while maintaining its great switching characteristics (I
off
= 0.8 nA at 1.1 V). Enhanced As-Te bonding probability after MWA, which was confirmed by Raman spectroscopy and density functional theory (DFT) calculations, can explain low forming voltage and improved device reliability.
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关键词
ovonic threshold switching characteristics,microwave annealing,excellent endurance,low drift characteristics,electrical characteristics,MWA-treated OTS device,low initial forming voltage,reduced threshold voltage drift,low forming voltage,device reliability,bonding probability,Raman spectroscopy,density functional theory,improved device reliability,size 30.0 nm,current 0.8 nA,voltage 1.1 V,SiGeAsTe
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