Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: from Atom to Array

H.-L. Chiang, J.-F. Wang, K.-H. Lin,C.-H. Nien,J.-J. Wu,K.-Y. Hsiang,C.-P. Chuu, Y.-W. Chen, X. W. Zhang,C. W. Liu,Tahui Wang,C. C. Wang,M.-H. Lee, M.-F. Chang,C.-S. Chang,T. C. Chen

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）

Cited 3|Views26

Key words

Al2O3 interfacial layer,orthorhombic phase,remanent polarization,Hf1-xZrxO2-based FTJ devices,Metal-Ferroelectric-IL-Metal FTJs,first-principles calculations,physical analyses,Metal-Ferroelectric-Metal FTJs,robust endurance,Ferroelectric Tunneling Junctions,interfacial-layer design,size 1.8 nm,time 10 year,Hf1-xZrxO2,Al2O3

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