Spin Valve Effect Based on Out‐Of‐Plane Magnetization Electrodes of Pt/Co/Ru with WSe ₂ and InSe Barriers

Spintronics research has been of emerging interest in the inorganic and organic electronics field, and magnetic materials play an important role in spintronics. Here, the spin valve (SV) devices are reported based on few-layered van der Waals semiconducting WSe2 or InSe sandwiched between room-temperature ferromagnet Pt/Co/Ru and exfoliated layered ferromagnetic metal Fe3GeTe2 (FGT). The metallic interface rather than the Schottky barrier is formed despite the semiconducting nature of WSe2 and InSe, which may be originated from the interface hybridization with Pt/Co/Ru and FGT. The magnetoresistance of both devices persists up to the Curie temperature of FGT, and the magnitude of the magnetoresistance does not vary with the applied current, which indicates these devices have stable device performance. The work reveals that easily fabricated Pt/Co/Ru multilayers could be stable 3D perpendicular magnetocrystalline anisotropy (PMA) spin injection electrodes applied in SV devices, facilitated by combining 2D magnets, which is expected to be an attractive candidate for 2D applications.