RRAM and WORM memory devices using Protamine Sulfate and Graphene Oxide

Biomaterials are extensively exploited as the resistive switching materials since last decade. Biomaterials such as proteins, DNA, enzymes, polysaccharides, starch, natural materials are being used as the active layer for the resistive switching memory devices. In this report we have investigated the Resistive Switching (RS) Memory behavior of a biomolecule Protamine Sulfate (PS), Graphene Oxide (GO) and their mixture. It has been observed that RS device having pure PS or GO as the active layer showed non-volatile memory behavior suitable for Write Once Read Many (WORM) memory applications. Dynamic transition of switching behavior from WORM to bipolar switching observed in the device designed with PS + GO mixed system. In case of the mixed film the set and reset power is found to be less than the individuals which is advantageous with respect to the power consumption. The memory window is also found to be increased multiple times.