Ion irradiation of supported graphene: Defect formation and atmospheric doping

•Substrate contribution to the defect formation – from 55% to 90%.•Substrate sputtering is dominant defect source in graphene for 46 MeV Ar irradiation.•Hot electrons are dominant defect source in graphene for 240 keV H irradiation.•Atmospheric doping reaches saturation at a defect density of ∼1011cm−2.•Substrate material affects doping saturation.