Effects of Ti-doping on energy storage properties and cycling stability of Pb0.925La0.05ZrO3 antiferroelectric thin films

•The superior energy storage properties of Pb0.925La0.05Zr1-xTixO3 antiferroelectric thin films in Zr rich were obtained.•In Zr-rich region, the saturation polarization strengthens of PLZT with increasing Ti content due to change of ion-radius, and the switching field decreased which means the enhancement of ferroelectricity.•The co-doped PLZT films possessed higher breakdown strength, which greatly optimized the energy storage properties.•The high recoverable energy density of 49.7 J/cm3 and efficiency of 54% were obtained in the Pb0.925La0.05Zr0.985Ti0.015O3 film.