High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 Dbm Output Power and 10.4 Mw/μm2 Power Density at 94 GHz
IEEE Journal of Microwaves（2022）
Key words
InP/Ga(In)AsSb,double heterojunction bipolar transistors (DHBTs),common-emitter (CE),common-base (CB),load-pull measurements,maximum output power,power gain,power density
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