Unveiling a geometric angstrom era of transistors: Physical gate length scaled down to one atom thickness

The world shortest gate length transistor was born using MoS2 as channel and the edge of graphene as gate, exhibiting on/off ratios up to 1.02 × 105 and subthreshold swing values down to 117mVdec−1. This work unveils that the geometric Angstrom era of transistors has come into reality. However, there is still a long way to go for the sub-1 nm- Lg transistors form the lab to the fab.