A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET

IEEE Journal of Solid-State Circuits(2022)

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摘要
This work presents a fully integrated 140-GHz transmitter (TX) achieving a data rate of 160 Gb/s with similar to 1-pJ/b efficiency in the 22-nm Intel FinFET technology. The TX leverages a wideband radio frequency digital to analog converter (RF-DAC) architecture with embedded 4:1 multiplexer, and it is integrated with a sub-sampling quadrature phase-locked loop (PLL), frequency tripler, local oscillator (LO) buffers, wideband two-stage power amplifier (PA), and on-chip SRAM/pseudorandom binary sequence (PRBS) for high-speed data generation. The TX achieves 120/160-Gb/s 16 quadratic-amplitude modulation (QAM) with -19/ -17-dB error vector magnitude (EVM) at an output power of +1.5/ +0.8 dBm.
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关键词
4.1 serializer,CMOS,FinFET,phase-locked loop (PLL),quadrature voltage-controlled oscillator (QVCO),radio frequency digital to analog converter (RF DAC),sub-terahertz (subTHz),transmitter (TX),wideband
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