DC and low a frequency noise analysis of p channel gate all around vertically stacked silicon nanosheets

•p-Channel GAA NS FETs presents excellent subthreshold slope and low leakage current.•As drawback, important mobility variability and high access resistances are observed.•The 1/f noise is completely explained in the framework of δn + δμ mechanism.•In strong inversion the access resistances noise contribution dominates the 1/f noise.