Perspective of ferroeletric-HfO2 materials for electron device applications

HfO 2 is already accepted as an indispensable material for advanced logic devices in LSI. The emergence of ferroelectricity in doped-HfO 2 systems has further enhanced the value as potential material for memory devices. Several memory applications have been proposed and demonstrated using ferroelectric-HfO 2 , but most of those electrical performances are still in the development stage. In this work, we present our viewpoints of ferroelectric-HfO 2 study for the future electron device applications.