A 4F² Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon

Complete 4F2 vertical nanowire (VNW) 1T1R cells with 10 ⁶ cycles switching endurance and with a demonstrated capability of performing Boolean logic are fabricated and characterized in cross-point arrays. The performance of the vertical 1T1R cell is benefited from using the same III-V/high- $k$ interface both for the vertical GAA MOSFET selector as well as the ReRAM. In this paper, we also compare the InAs nanowire implementation to a nanowire with an InGaAs top segment to utilize the relatively larger bandgap of InGaAs to reduce sneak-path leakage currents.