A 184nW, 121µg/√Hz Noise Floor Triaxial MEMS Accelerometer with Integrated CMOS Readout Circuit and Variation-Compensated High Voltage MEMS Biasing

Yimai Peng,Seokhyeon Jeong,Kyojin Choo,Yejoong Kim,Li-Yu Chen,Rohit Rothe,Li Xu, Ilya Gurin,Omid Oliaei,Vadim Tsinker,Stephen Bart,Peter Hartwell,David Blaauw,Dennis Sylvester

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）

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摘要

We present a triaxial MEMS accelerometer readout circuit (RoC) with 40× signal gain using a high MEMS bias voltage, reducing power by eliminating the need for a chopped AFE chain. The proposed RoC achieves a 121µg/√Hz input referred noise and 1.5g dynamic range at 184nW per-axis power, while maintaining <1% non-linearity and a mechanical full-scale of >20 g, improving FoM by 15.6×.

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关键词

signal gain,RoC,triaxial MEMS accelerometer readout circuit,variation-compensated high voltage MEMS biasing,integrated CMOS readout circuit,power 184.0 nW

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