Effect of SnO 2 /ZnO Double Layer Anti-Reflective Coating on SnS Chalcogenide-Based Thin-Film Solar Cell

In this study the effect of theoretically designed SnO 2 /ZnO double layer anti reflective coating (DLARC) on SnS chalcogenide-based thin-film solar cell is studied. The efficiency of SnS chalcogenide-based thin-film is calculated theoretically and compared with the experimental data available in the literature. The parameters which decide the efficiency such as short circuit current ( J sc ), internal and external quantum efficiencies (IQE, EQE) are calculated with and without DLARC using Thelen and Musset numerical method. It is found that values J sc , IQE and EQE of the SnO 2 /ZnO DLARC coated on SnS chalcogenide-based thin-film solar cell has increased when compared to bare SnS thin film solar cell as the reflectivity reduction up to 10% in wavelength range of 400–800 nm which is achieved by the DLARC. As a result, SnO 2 /ZnO DLARC increases the efficiency of SnS chalcogenide-based thin-film solar cells.