Modeling and Simulation Analysis Hetero Junction Doping Less Vertical TFET For Biomedical Application

In this manuscript, the physical modeling of the hetero junction doping less vertical TFET (HJD-VTFET) is carried out. The mathematical relations of the surface potential are developed, solved and simulated in the MAPPLE to get the result plots. Besides this, the same structure is also designed and simulated in the Silvaco TCAD tool and finally the both results are compared for their verifications and validations. In the designed device a cavity under the gate and along with the gate oxide is carved to investigate the impact of the various biomolecule’s dielectric constant on the electrical characteristics of the device. Surface potential of the device is estimated for various charged and uncharged biomolecules confined in the cavity. The effect of gate and drain voltage on the surface potential is also analyzed under the condition when the cavity is filled with the biomolecules.